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| TPV596 SILICON N-CHANNEL RF POWER MOSFET DESCRIPTION: The TPV596 is Designed for Common Source Push Pull RF Power Applications up to 400 MHz. PACKAGE STYLE 280 4L STUD FEATURES: * PG = 12 dB min. at 0.5 W/ 860 MHz * Common Emitter * OmnigoldTM Metallization System MAXIMUM RATINGS IC VCE TJ TSTG PDISS 0.7 A 24 V -65 C to +200 C -65 C to +150 C 8.75 W @ TC = 25 C NONE O 1 = COLLECTOR 2 = BASE 3 & 4 = EMITTER CHARACTERISTICS SYMBOL BVCEO BVCBO BVCER BVEBO ICBO hFE COB PG IC = 20 mA TC = 25 C O TEST CONDITIONS IC = 1.0 mA IC = 20 mA IE = 0.25 mA VCB = 28 V IC = 100 mA VCB = 28 V VCE = 20 V IE = 0.22 A VCE = 5.0 V f = 1.0 MHz f = 860 MHz RBE = 10 MINIMUM 24 45 50 3.5 TYPICAL MAXIMUM UNITS V V V V 0.45 15 120 5.0 11.5 12 mA --pF dB A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1 |
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